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Электронный компонент: 2SC2062S

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2SC2062S
Transistors
Rev.A
1/2
High-gain Amplifier Transistor (32V, 0.3A)
2SC2062S

Features
1) Darlington connection for a high h
FE
.
(DC current gain = 5000 (Min.) at V
CE
= 3V, I
C
= 0.1A.)
2) High input impedance.

Absolute maximum ratings (Ta=25
C)
E
C
B
C
B
E
: Emitter
: Collector
: Base
External dimensions (Unit : mm)
Taping specifications
SPT
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.45
0.5
4.0
2.0
(1)Emitter
(2)Collector
(3)Base

Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
Tj
Tstg
Limits
40
32
12
0.3
0.3
150
-
55 to +150
Unit
V
V
V
A
W
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
f
T
Cob
40
32
12
-
-
-
-
-
-
-
-
-
200
2.5
-
-
-
0.1
0.1
-
-
V
V
V
A
A
MHz
pF
I
C
=
100
A
I
C
=
10mA
I
E
=
100
A
V
CB
=
30V
V
EB
=
12V
V
CE(sat)
-
-
1.4
V
I
C
/I
B
=
200mA/0.2mA
h
FE
10000
-
-
-
V
CE
/I
C
=
3V/0.1A
V
CE
=
5V , I
E
= -
10mA , f
=
100MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
Transition frequency of the device.

Packaging specifications and h
FE
Type
2SC2062S
SPT
C
TP
5000
Package
h
FE
Code
Basic ordering unit (pieces)
2SA1759
Transistors
Rev.A
2/2
Electrical characteristics curves
0
1.0
2.0
COLLECTOR CURRENT : Ic (mA)
COLLECTOR - EMITTER VOLTAGE : V
CE
(V)
0
100
200
300
400
500
Fig.1 Typical output characteristics (
)
Ta
=25
C
I
B
=
0
A
2.0
4.0
6.0
8.0
10
12
14
16
18
20
0
1.0
2.0
3.0
4.0
5.0
COLLECTOR CURRENT : Ic (mA)
COLLECTOR - EMITTER VOLTAGE : V
CE
(V)
0
20
40
60
80
100
Fig.2 Typical output characteristics (
)
Ta
=25
C
I
B
=
0
A
0.2
0.4
0.8
1.2
1.6
1.8
2.0
2.4
BASE EMITTER VOLTAGE : V
BE(on)
(V)
COLLECTOR CURRENT : I
C
(mA)
2.2
2.0
1.8
1.6
1.4
1.0 2.0
5.0 10
20
50 100
200
500 1000
1.2
1.0
0.8
0.6
0.4
Fig.3 Base emitter 'ON' voltage
vs. collector current
Ta
=25
C
V
CE
=
5V


COLLECTOR EMITTER SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector emitter saturation voltage
vs. collector current
1.8
1.6
1.4
1.2
1.0 2.0
5.0 10
20
50 100
200
500 1000
1.0
0.8
0.6
0.4
0.2
0
Ta
=25
C
I
C
/I
B
=
1000
0.1
5.0 10 20
50 100 200
500 1000
0.2
0.5 1.0 2.0
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
1k
2k
5k
10k
20k
50k
100k
Fig.4 DC current gain vs. collector current (
)
V
CE
=
10V
5V
3V
Ta
=25
C
0.1
5.0 10 20
50 100 200
500 1000
0.2
0.5 1.0 2.0
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
1k
2k
5k
10k
20k
50k
100k
Fig.5 DC current gain vs. collector current (
)
Ta
=25
C
V
CE
=
5V
Ta
=25
C
Ta
=
-
55
C

BASE EMITTER SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
2.2
2.0
1.8
1.6
1.4
1
2
5
10
20
50 100
200
500 1000
1.2
1.0
0.8
0.6
0.4
Fig.7 Base emitter saturation voltage
vs. collector current
Ta
=25
C
I
C
/I
B
=
1000
1.0
10
20
50
100
200
500
1000
5.0
2.0
CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
COLLECTOR CURRENT : I
C
(mA)
10
20
50
100
200
500
1000
Fig.8 Current gain-bandwidth product
vs. collector current
Ta
=25
C
V
CE
=
5V
0.5
1
2
5
10
20
5
CAPACITANCE (pF)
REVERSE BIAS VOLTAGE
(V)
0
1
2
5
10
20
50
100
Fig.9 Capacitance vs. reverse bias voltage
Ta
=25
C
f=1MHz
Cib
Cob


Appendix
Appendix1-Rev1.1


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